Electronically active defects in the Cu2ZnSn(Se,S)4 alloys as revealed by transient photocapacitance spectroscopy

被引：48

作者：

Miller, D. Westley ^{[1
]}

Warren, Charles W. ^{[1
]}

Gunawan, Oki ^{[2
]}

Gokmen, Tayfun ^{[2
]}

Mitzi, David B. ^{[2
]}

Cohen, J. David ^{[1
]}

机构：

[1] Univ Oregon, Dept Phys, Eugene, OR 97403 USA

[2] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 14期

关键词：

SOLAR-CELL;

D O I：

10.1063/1.4754834

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transient photocapacitance (TPC) spectra were obtained on a series of Cu2ZnSn(Se,S)(4) absorber devices with varying Se: S ratios, providing bandgaps (E-g) between 1 eV and 1.5 eV. Efficiencies varied between 8.3% and 9.3% for devices with E-g <= 1.2 eV and were near 6.5% for devices with E-g >= 1.4 eV. The TPC spectra revealed a band-tail region with Urbach energies at or below 18 meV for the first group, but in the 25-30 meV range for the higher band-gap samples. A deeper defect band centered near 0.8 eV was also observed in most samples. We identified a correlation between the Urbach energies and the voltage deficit in these devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754834]

引用

页数：4

共 13 条

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