Thickness effect on field electron emission of silicon emitter arrays coated with sol-gel Ba0.65Sr0.35M3 and (Ba0.65Sr0.35)0.75La0.25TiO3 thin films

被引：5
作者：
Lu, H. [1 ]
Chen, X. F. [2 ]
Pan, J. S. [3 ]
Zhu, W. G. [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Ctr Microelect, Singapore 639798, Singapore
[2] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Elect Mat Res & Engn, Xian 710049, Peoples R China
[3] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore
来源：
THIN SOLID FILMS | 2008年 / 516卷 / 21期
关键词：
field emission; thickness effect; sol-gel deposition; barium strontium titanate; thin films; doped films; X-ray photoelectron spectroscopy; X-ray diffraction;
D O I：
10.1016/j.tsf.2008.04.083
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ba0.65Sr0.35TiO3 (BST) and (Ba0.65Sr0.35)(0.75)Lao(0.25)TiO(3) (BSLT) thin films with different thicknesses have been deposited onto silicon field emitter arrays (FEAs) using sol-gel technology for field electron emission applications. The BST-coated Si FEAs demonstrate an enhancement of electron emission, but the threshold field is BST film thickness dependence. The study reveals that the film thickness dependence of electron emission is due to the various microstructural features developed in BST films with different thicknesses. The crystallinity in perovskite films is improved with the increasing film thickness. The 15-nm-thick BST film is amorphous in nature, and then the polycrystalline perovskite grains are formed on the top of the amorphous layer in the thicker film. BSLT-coated Si FEAs also exhibit similar thickness-dependent field emission enhancement behavior, but thick BSLT samples (>= 60 nm) have much significant enhancement of field emission compared with similar thickness BST samples due to effective supply of emitted electrons in the bulk region of electron-doped BSLT coatings. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：7735 / 7740
页数：6
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