Temperature independence of the spin-injection efficiency of a MgO-based tunnel spin injector

被引:66
作者
Salis, G
Wang, R
Jiang, X
Shelby, RM
Parkin, SSP
Bank, SR
Harris, JS
机构
[1] IBM Corp, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland
[2] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA
[3] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA
关键词
D O I
10.1063/1.2149369
中图分类号
O59 [应用物理学];
学科分类号
摘要
The spin polarization of electrons injected into GaAs from a CoFe/MgO(100) tunnel spin injector is inferred from the circular polarization of light emitted from a GaAs-based quantum well (QW) detector. The circular polarization strongly depends on the spin and electron hole recombination lifetimes in the QW. Using time-resolved optical techniques, we show that these lifetimes are highly temperature dependent. A peak in the charge lifetime versus temperature is likely responsible for the previously observed dip in the electroluminescence polarization. Evidence for a temperature-independent spin injection efficiency of similar to 70% from 10 K to room temperature is found. (c) 2005 American Institute of Physics.
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页码:1 / 3
页数:3
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