Design Exploration of Hybrid CMOS and Memristor Circuit by New Modified Nodal Analysis

被引:55
作者
Fei, Wei [1 ]
Yu, Hao [1 ]
Zhang, Wei [2 ]
Yeo, Kiat Seng [1 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Nanyang Technol Univ, Sch Comp Engn, Singapore 639798, Singapore
关键词
3-D crossbar memory; memristor; nano-scale circuit simulation; DEVICES;
D O I
10.1109/TVLSI.2011.2136443
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Design of hybrid circuits and systems based on CMOS and nano-device requires rethinking of fundamental circuit analysis to aid design exploration. Conventional circuit analysis with modified nodal analysis (MNA) cannot consider new nano-devices such as memristor together with the traditional CMOS devices. This paper has introduced a new MNA method with magnetic flux (Phi) as new state variable. New SPICE-like circuit simulator is thereby developed for the design of hybrid CMOS and memristor circuits. A number of CMOS and memristor-based designs are explored, such as oscillator, chaotic circuit, programmable logic, analog-learning circuit, and crossbar memory, where their functionality, performance, reliability and power can be efficiently verified by the newly developed simulator. Specifically, one new 3-D-crossbar architecture with diode-added memristor is also proposed to improve integration density and to avoid sneak path during read-write operation.
引用
收藏
页码:1012 / 1025
页数:14
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