Bandwidth Enhancement of Low-Profile SIW Cavity Antenna with Bilateral Slots

被引:12
作者
Niu, Bing-Jian [1 ]
Tan, Jie-Hong [1 ]
机构
[1] Samsung Elect, Samsung Network R&D Ctr, Shenzhen 518060, Peoples R China
来源
PROGRESS IN ELECTROMAGNETICS RESEARCH LETTERS | 2019年 / 82卷
关键词
BACKED SLOT; DESIGN;
D O I
10.2528/PIERL18102505
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel design to enhance the bandwidth of a low-profile substrate integrated waveguide (SIW) cavity antenna is presented. Distinct from traditional antennas with unilateral slots, bilateral slots are utilized as radiating elements in the proposed design. By etching an additional slot at the bottom plane, a new resonant mode is introduced, and quality factors of two original modes are significantly reduced. Antenna's bandwidth can be dramatically enhanced by merging these three modes within a single operating band. A prototype is fabricated and measured. With the height of 0.018 lambda(0), the measured 10-dB bandwidth is 410 MHz (3.24-3.65 GHz), corresponding to 11.9% fractional bandwidth. The measured gain is higher than 4.3 dBi, and the measured efficiency is around 75% within the operation band. Those attractive features, e.g., low profile, enhanced bandwidth and moderate radiation performance, make the proposed antenna suitable for future 5G systems.
引用
收藏
页码:25 / 32
页数:8
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