The PTAT sensors in CMOS technology

被引：0
|
作者：
Szermer, M. [1 ]
Napieralski, A. [1 ]
机构：
[1] Tech Univ Lodz, Dept Microelect & Comp Sci, PL-90924 Lodz, Poland
来源：
CAS 2005: INTERNATIONAL SEMICONDUCTOR CONFERENCE | 2005年 / 1-2卷
关键词：
PTAT; SEWING;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper the PTAT (Point To Absolute Temperature) sensor, design in CMOS technology is discussed and presented. Two different structures are described. The first one was implemented together with 12-bit ADC into a test chip. Although this sensor has a small linear region, only up to 60 degrees C, it is fully functional and fulfilled all requirements. Nevertheless, that was the reason why the new research was established, and a second structure, with wide, up to 180 degrees C, linear range was developed.
引用
收藏
页码：197 / 200
页数：4
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