Lower Limits To Specific Contact Resistivity

被引：4
作者：
Baraskar, Ashish [1 ]
Gossard, Arthur C. [2 ,3 ]
Rodwell, Mark J. W. [3 ]
机构：
[1] GLOBALFOUNDRIES, Yorktown Hts, NY 10598 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA USA
[3] Univ Calif Santa Barbara, Dept ECE, Santa Barbara, CA USA
来源：
2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2013年
关键词：
Contact resistivity; Landauer limit; metal semiconductor junctions; Schottky barrier; transmission probability; NONALLOYED OHMIC CONTACTS; THERMAL-STABILITY; RESISTANCE;
D O I：
10.1109/ICIPRM.2012.6403356
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We calculate minimum feasible contact resistivities to n-type and p-type InAs and In0.53Ga0.47As. Resistivities were calculated for a range of Schottky barrier heights as well as for the case where the transmission probability is unity (Landauer limit). Calculations are compared with recent experimental data. Experimental contact resistivities for n-In0.53Ga0.47As and n-InAs lie within 2.5:1 of calculated resistivities given generally accepted values of Schottky barrier potential. Computed resistivities in the presence of a barrier are only 3.5:1 to 4:1 above Landauer limits.
引用
收藏
页码：196 / 199
页数：4
相关论文
共 23 条
  • [1] Baraskar A., 2010, 16 INT C MOL BEAM EP
  • [2] Baraskar A., 2011, THESIS
  • [3] High doping effects on in-situ Ohmic contacts to n-InAs
    Baraskar, Ashish
    Jain, Vibhor
    Wistey, Mark A.
    Singisetti, Uttam
    Lee, Yong Ju
    Thibeault, Brian
    Gossard, Arthur
    Rodwell, Mark J. W.
    [J]. 2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2010,
  • [4] Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs
    Baraskar, Ashish K.
    Wistey, Mark A.
    Jain, Vibhor
    Singisetti, Uttam
    Burek, Greg
    Thibeault, Brian J.
    Lee, Yong Ju
    Gossard, Arthur C.
    Rodwell, Mark J. W.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (04): : 2036 - 2039
  • [5] Electrical characterization, metallurgical investigation, and thermal stability studies of (Pd, Ti, Au)-based ohmic contacts
    Chor, EF
    Zhang, D
    Gong, H
    Chong, WK
    Ong, SY
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (05) : 2437 - 2444
  • [6] ANALYTICAL CALCULATION OF THE QUANTUM-MECHANICAL TRANSMISSION COEFFICIENT FOR A TRIANGULAR, PLANAR-DOPED POTENTIAL BARRIER
    CHRISTODOULIDES, DN
    ANDREOU, AG
    JOSEPH, RI
    WESTGATE, CR
    [J]. SOLID-STATE ELECTRONICS, 1985, 28 (08) : 821 - 822
  • [7] ELECTRON TUNNELING IN METAL-SEMICONDUCTOR BARRIERS
    CONLEY, JW
    DUKE, CB
    MAHAN, GD
    TIEMANN, JJ
    [J]. PHYSICAL REVIEW, 1966, 150 (02): : 466 - &
  • [8] NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS
    CROWELL, CR
    RIDEOUT, VL
    [J]. SOLID-STATE ELECTRONICS, 1969, 12 (02) : 89 - &
  • [9] Jain V., 2010, IEEE DEV RES C S BEN
  • [10] Jain V., 2009, IEEE LEOS INT C IND
123