Broadband ferromagnetic resonance linewidth measurement of magnetic tunnel junction multilayers

被引：14
|
作者：
Sierra, J. F. [2 ]
Aliev, F. G. [2 ]
Heindl, R. [1 ]
Russek, S. E. [1 ]
Rippard, W. H. [1 ]
机构：
[1] Natl Inst Stand & Technol, Boulder, CO 80305 USA
[2] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 01期
关键词：
annealing; ferromagnetic resonance; magnetic domains; magnetic hysteresis; magnetic multilayers; magnetic structure; magnetic tunnelling;
D O I：
10.1063/1.3054642
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The broadband ferromagnetic resonance (FMR) linewidth of the free layer of magnetic tunnel junctions is used as a simple diagnostic of the quality of the magnetic structure. The FMR linewidth increases near the field regions of free layer reversal and pinned layer reversal, and this increase correlates with an increase in magnetic hysteresis in unpatterned films, low-frequency noise in patterned devices, and previous observations of magnetic domain ripple by use of Lorentz microscopy. Postannealing changes the free layer FMR linewidth, indicating that considerable magnetic disorder, originating in the exchange-biased pinned layer, is transferred to the free layer.
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页数：3
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