Valley entanglement of excitons in monolayers of transition-metal dichalcogenides

被引：21

作者：

Tokman, Mikhail ^{[1
]}

Wang, Yongrui ^{[2
]}

Belyanin, Alexey ^{[2
]}

机构：

[1] Russian Acad Sci, Inst Appl Phys, Nizhnii Novgorod 603950, Russia

[2] Texas A&M Univ, Dept Phys & Astron, College Stn, TX 77843 USA

来源：

PHYSICAL REVIEW B | 2015年 / 92卷 / 07期

基金：

俄罗斯基础研究基金会; 美国国家科学基金会;

关键词：

MOS2;

D O I：

10.1103/PhysRevB.92.075409

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We show that excitons in K and K' valleys of transition metal dichalcogenide monolayers can be entangled with respect to their valley degree of freedom by absorbing linearly polarized single photons. This effect does not require any interaction between K and K' excitons in contrast to conventional mechanisms of entanglement that are mediated by coupling between quantum systems (e.g., entanglement of photons in nonlinear optical interactions). The valley entanglement of excitons and free carriers can be verified by measuring the polarization of their photoluminescence or fluctuations of the photocurrent under an applied in-plane dc bias.

引用

页数：11

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