Increased Polarization Ratio on Semipolar (11(2)over-bar2) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition

被引：29

作者：

Fellows, Natalie ^{[1
]}

Sato, Hitoshi ^{[1
]}

Masui, Hisashi ^{[1
]}

DenBaars, Steven P. ^{[1
]}

Nakamura, Shuji ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Coll Engn, Dept Mat, Solid State Lighting & Energy Ctr, Santa Barbara, CA 93106 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 10期

关键词：

light-emitting diode; bulk GaN; semipolar; (11(2)over-bar2) plane; polarization;

D O I：

10.1143/JJAP.47.7854

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical properties of InGaN/GaN light-emitting diode (LED) samples prepared on the (11 (2) over bar2) surface of bulk GaN were investigated. Four samples were prepared with increasing indium concentrations. The LEDs emitted at 527, 531, 556, and 568 run at 20 mA dc. Their optical polarization ratios were measured and the samples with higher In showed a higher ratio than the shorter wavelength ones. A polarization ratio of 0.65 was measured for the longest wavelength sample. This suggests that the more In incorporated into the quantum well layers leads to an increase in the splitting of the valence subband levels. [DOI: 10.1143/JJAP.47.7854]

引用

页码：7854 / 7856

页数：3

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