TiO2-based photoanodes modified with GO and MoS2 layered materials

被引:9
作者
Trenczek-Zajac, Anita [1 ]
Banas, Joanna [1 ]
Radecka, Marta [1 ]
机构
[1] AGH Univ Sci & Technol, Fac Mat Sci & Ceram, Al A Mickiewicza 30, PL-30059 Krakow, Poland
关键词
TIO2 NANOTUBE ARRAYS; GRAPHENE OXIDE; MOLYBDENUM-DISULFIDE; OPTICAL-PROPERTIES; ELECTROPHORETIC DEPOSITION; NANOPARTICLES; NANOSHEETS; COMPOSITE; EVOLUTION; FILMS;
D O I
10.1039/c6ra22979d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
MoS2/TiO2 and GO/TiO2 nanocomposites were synthesized via environmentally friendly electrodeposition (GO, MoS2) and - for the purpose of comparison - hydrothermally (MoS2). The modified Hummers' method was used to form GO from expanded graphite. A hydrothermal process of MoS2 preparation from Na2MoO4 and CH4N2S with the use of a surfactant or NH2OH center dot HCl and NH3(aq) was applied. The prepared powders were characterized by means of X-ray diffraction, Raman spectroscopy, and scanning electron microscopy. Both GO and MoS2 were found to form 2D layered materials. Electrochemical deposition of two-dimensional compounds on the surface of TiO2 was conducted with the use of a suspension of 2D MoS2 or GO in KNO3 (pH close to neutral) at 1.2 V for 40 s. Hydrothermal conditions were applied for MoS2 deposition as well. The morphology and photoelectrochemical properties of GO-and MoS2-modified TiO2 photoanodes were studied, and measurements using electrochemical impedance spectroscopy were performed. Lower charge transfer resistance as well as a significant enhancement of photoelectrochemical response were confirmed for MoS2/TiO2 nanocomposites in comparison to TiO2. The highest photocurrent was achieved for 2D/TiO2 prepared with the use of MoS2, characterized by a well-defined microstructure and higher crystallinity. Hydrothermally modified photoanodes were found to be stable under photoelectrochemical measurement conditions.
引用
收藏
页码:102886 / 102898
页数:13
相关论文
共 73 条
[1]  
Acerce M, 2015, NAT NANOTECHNOL, V10, P313, DOI [10.1038/NNANO.2015.40, 10.1038/nnano.2015.40]
[2]   Raman characterization of defects and dopants in graphene [J].
Beams, Ryan ;
Cancado, Luiz Gustavo ;
Novotny, Lukas .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2015, 27 (08)
[3]   Isolation and characterization of few-layer black phosphorus [J].
Castellanos-Gomez, Andres ;
Vicarelli, Leonardo ;
Prada, Elsa ;
Island, Joshua O. ;
Narasimha-Acharya, K. L. ;
Blanter, Sofya I. ;
Groenendijk, Dirk J. ;
Buscema, Michele ;
Steele, Gary A. ;
Alvarez, J. V. ;
Zandbergen, Henny W. ;
Palacios, J. J. ;
van der Zant, Herre S. J. .
2D MATERIALS, 2014, 1 (02)
[4]   Graphene-like layered metal dichalcogenide/graphene composites: synthesis and applications in energy storage and conversion [J].
Chen, Dongyuan ;
Chen, Weixiang ;
Ma, Lin ;
Ji, Ge ;
Chang, Kun ;
Lee, Jim Yang .
MATERIALS TODAY, 2014, 17 (04) :184-193
[5]   TiO2 nanotube arrays co-loaded with Au nanoparticles and reduced graphene oxide: Facile synthesis and promising photocatalytic application [J].
Chen, Yao ;
Tang, Yanhong ;
Luo, Shenglian ;
Liu, Chengbin ;
Li, Yue .
JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 578 :242-248
[6]  
Chhowalla M, 2013, NAT CHEM, V5, P263, DOI [10.1038/nchem.1589, 10.1038/NCHEM.1589]
[7]  
Childres I., 2013, New Develop. Photon Mater. Res., V1, P1
[8]   The Importance of Interbands on the Interpretation of the Raman Spectrum of Graphene Oxide [J].
Claramunt, Sergi ;
Varea, Aida ;
Lopez-Diaz, David ;
Mercedes Velazquez, M. ;
Cornet, Albert ;
Cirera, Albert .
JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 119 (18) :10123-10129
[9]   TiO2-based solar cells sensitized by chemical-bath-deposited few-layer MoS2 [J].
Du, Tian ;
Wang, Ning ;
Chen, Haijun ;
He, Hongcai ;
Lin, Hong ;
Liu, Kai .
JOURNAL OF POWER SOURCES, 2015, 275 :943-949
[10]   DETERMINATION OF FLAT-BAND POSITION OF CDS CRYSTALS, FILMS, AND POWDERS BY PHOTOCURRENT AND IMPEDANCE TECHNIQUES - PHOTOREDOX REACTION MEDIATED BY INTRAGAP STATES [J].
FINLAYSON, MF ;
WHEELER, BL ;
KAKUTA, N ;
PARK, KH ;
BARD, AJ ;
CAMPION, A ;
FOX, MA ;
WEBBER, SE ;
WHITE, JM .
JOURNAL OF PHYSICAL CHEMISTRY, 1985, 89 (26) :5676-5681