Homogeneous shrinking/amplifying device and its layered realization
被引:5
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作者:
Yang, Chengfu
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机构:
Yunnan Univ, Sch Informat Sci & Engn, Kunming 650091, Yunnan, Peoples R China
Yunnan Univ, Wireless Innovat Lab, Kunming 650091, Yunnan, Peoples R ChinaYunnan Univ, Sch Informat Sci & Engn, Kunming 650091, Yunnan, Peoples R China
Yang, Chengfu
[1
,2
]
Huang, Ming
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机构:
Yunnan Univ, Sch Informat Sci & Engn, Kunming 650091, Yunnan, Peoples R China
Yunnan Univ, Wireless Innovat Lab, Kunming 650091, Yunnan, Peoples R ChinaYunnan Univ, Sch Informat Sci & Engn, Kunming 650091, Yunnan, Peoples R China
Huang, Ming
[1
,2
]
Li, Tinghua
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机构:
China Tobacco Yunnan Ind Co Ltd, Technol Ctr, Kunming 65023, Yunnan, Peoples R ChinaYunnan Univ, Sch Informat Sci & Engn, Kunming 650091, Yunnan, Peoples R China
Li, Tinghua
[3
]
Yang, Jingjing
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机构:
Yunnan Univ, Sch Informat Sci & Engn, Kunming 650091, Yunnan, Peoples R China
Yunnan Univ, Wireless Innovat Lab, Kunming 650091, Yunnan, Peoples R ChinaYunnan Univ, Sch Informat Sci & Engn, Kunming 650091, Yunnan, Peoples R China
Yang, Jingjing
[1
,2
]
Mao, Fuchun
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机构:
Yunnan Univ, Sch Informat Sci & Engn, Kunming 650091, Yunnan, Peoples R China
Yunnan Univ, Wireless Innovat Lab, Kunming 650091, Yunnan, Peoples R ChinaYunnan Univ, Sch Informat Sci & Engn, Kunming 650091, Yunnan, Peoples R China
Mao, Fuchun
[1
,2
]
Xue, Yuyang
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机构:
Yunnan Univ, Sch Informat Sci & Engn, Kunming 650091, Yunnan, Peoples R ChinaYunnan Univ, Sch Informat Sci & Engn, Kunming 650091, Yunnan, Peoples R China
Xue, Yuyang
[1
]
机构:
[1] Yunnan Univ, Sch Informat Sci & Engn, Kunming 650091, Yunnan, Peoples R China
[2] Yunnan Univ, Wireless Innovat Lab, Kunming 650091, Yunnan, Peoples R China
[3] China Tobacco Yunnan Ind Co Ltd, Technol Ctr, Kunming 65023, Yunnan, Peoples R China
Arbitrary regular/irregular shaped electromagnetic shrinking device and amplifying device with homogeneous, non-negative, anisotropic and genetic constitutive parameters are proposed and designed based on linear transformation optics, which provides the flexibility for device designing, and closer to the practical implementation. Furthermore, layered structure based on effective medium theory is utilized to remove the anisotropic property of the proposed device. Simulation results show that when with sufficient layers, both the layered shrinking device and amplifying device behave nearly as perfect as the ideal one. A dielectric or magnetic object placed inside the proposed device will be visually transformed into another object with a bigger/smaller size and different constitutive parameters are figured out clearly, making the proposed device have potential applications in military camouflage or other field of electromagnetic engineering system. The shrinking/amplifying scale is tailored by the ratio of b/c (b and c are the quasi-radius of the arbitrarily shaped polygon). Composing of alternatively isotropic layers with positive material parameters would dramatically reduce the fabrication difficulty and move the device a step further towards the practical application. (C) 2019 Author(s).
机构:
INRIA, Non A Team, Parc Sci Haute Borne, F-59650 Villeneuve Dascq, France
Ecole Cent Lille, CRIStAL UMR CNRS 9189, F-59651 Villeneuve Dascq, France
Univ ITMO, Dept Control Syst & Informat, St Petersburg 197101, RussiaINRIA, Non A Team, Parc Sci Haute Borne, F-59650 Villeneuve Dascq, France
Efimov, Denis
Polyakov, Andrey
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机构:
INRIA, Non A Team, Parc Sci Haute Borne, F-59650 Villeneuve Dascq, France
Ecole Cent Lille, CRIStAL UMR CNRS 9189, F-59651 Villeneuve Dascq, France
Univ ITMO, Dept Control Syst & Informat, St Petersburg 197101, RussiaINRIA, Non A Team, Parc Sci Haute Borne, F-59650 Villeneuve Dascq, France
Polyakov, Andrey
Levant, Arie
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机构:
INRIA, Non A Team, Parc Sci Haute Borne, F-59650 Villeneuve Dascq, France
Ecole Cent Lille, CRIStAL UMR CNRS 9189, F-59651 Villeneuve Dascq, France
Tel Aviv Univ, Sch Math Sci, IL-6997801 Tel Aviv, IsraelINRIA, Non A Team, Parc Sci Haute Borne, F-59650 Villeneuve Dascq, France
Levant, Arie
Perruquetti, Wilfrid
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机构:
INRIA, Non A Team, Parc Sci Haute Borne, F-59650 Villeneuve Dascq, France
Ecole Cent Lille, CRIStAL UMR CNRS 9189, F-59651 Villeneuve Dascq, FranceINRIA, Non A Team, Parc Sci Haute Borne, F-59650 Villeneuve Dascq, France