GENERALIZED MEMORY ELEMENT AND CHAOTIC MEMORY SYSTEM

被引:47
作者
Bao, Bocheng [1 ]
Zou, Xiang [1 ]
Liu, Zhong [2 ]
Hu, Fengwei [1 ]
机构
[1] Changzhou Univ, Sch Informat Sci & Engn, Changzhou 213164, Peoples R China
[2] Nanjing Univ Sci & Technol, Dept Elect Engn, Nanjing 210094, Jiangsu, Peoples R China
来源
INTERNATIONAL JOURNAL OF BIFURCATION AND CHAOS | 2013年 / 23卷 / 08期
关键词
Chaos; chaotic memory system; dynamics; initial state; memory element; MEMRISTOR; CIRCUIT; ATTRACTORS;
D O I
10.1142/S0218127413501356
中图分类号
O1 [数学];
学科分类号
0701 ; 070101 ;
摘要
The concept of memory element or memory system is generalized to any device or system with memory effect in this paper. With the general definition of memory element, a new memory element model is proposed and its properties are studied. Based on the memory element, a simple chaotic memory system is constructed and its complex dynamics is depicted. These results verified by circuit experimental observations and PSIM simulations indicate that the proposed memory element has a pinched hysteresis loop characteristics for a periodic input, which depends on the initial state of memory element, and the amplitude and frequency of the applied input; the proposed chaotic memory system presents complex dynamics depending on system parameters and the initial state of memory element.
引用
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页数:12
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