In situ verification of single-domain III-V on Si(100) growth via metal-organic vapor phase epitaxy

被引：52

作者：

Doescher, Henning ^{[1
]}

Hannappel, Thomas ^{[1
]}

Kunert, Bernardette ^{[2
,3
]}

Beyer, Andreas ^{[2
,3
]}

Volz, Kerstin ^{[2
,3
]}

Stolz, Wolfgang ^{[2
,3
]}

机构：

[1] Helmholtz Ctr Berlin Mat & Energy, D-14109 Berlin, Germany

[2] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany

[3] Univ Marburg, Dept Phys, D-35032 Marburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 17期

关键词：

D O I：

10.1063/1.3009570

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reflectance anisotropy spectroscopy (RAS) was used in situ for the quantification of antiphase domains on surfaces of thin GaP films deposited onto Si(100) by metal-organic vapor phase epitaxy (MOVPE). The preparation of a single-domain GaP/Si(100) surface was determined via the analysis of RAS peak intensities in reference to the well-known P-rich surface reconstruction of homoepitaxially grown GaP(100). Both preprocessed Si(100) substrates and MOVPE as-grown GaP/Si(100) films were also characterized ex situ by atomic force microscopy to identify the formation of mono- and diatomic surface steps and to analyze of the domain distribution, respectively. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3009570]

引用

页数：3

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