Fabrication and Characterization of n-ZnO/p-SiC Heterojunction Diode

被引：0

作者：

Guziewicz, M. ^{[1
]}

Jung, W. ^{[1
]}

Kruszka, R. ^{[1
]}

Domagala, J. ^{[1
,2
]}

Piotrowska, A. ^{[1
]}

Golaszewska, K. ^{[1
]}

Wachnicki, L. ^{[2
]}

Guziewicz, E. ^{[2
]}

Godlewski, M. ^{[2
]}

机构：

[1] Inst Electr Mat Technol, Al Lotnikow 32-46, PL-02668 Warsaw, Poland

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

heterojunction; ZnO-SiC diode; atomic layer deposition; impedance spectroscopy; ATOMIC LAYER DEPOSITION;

D O I：

10.4028/www.scientific.net/MSF.717-720.1323

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO as well as SiC are wide bangap materials with prospective electronic applications. Very good lattice matching of the materials allowed formation a n-ZnO/p-SiC heteroepitaxial junction. The n-ZnO film was epitaxially grown onto the p-SiC substrate using the atomic layer deposition method. The fabricated p-n diode was studied by I-V and C-V characteristics as well as by impedance spectroscopy. The diode shows a high rectifying ratio of 107 and an ideality factor of 1.21.

引用

页码：1323 / +

页数：2

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