Gettering effect in grain boundaries of multi-crystalline silicon

被引：3
作者：
Nouri, H. [1 ]
Bouaicha, M. [1 ]
Ben Rabha, M. [1 ]
Bessais, B. [1 ]
机构：
[1] Ctr Rech & Technol Energie, Lab Photovolta, Hammam Lif 2050, Tunisia
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 10-11 | 2012年 / 9卷 / 10-11期
关键词：
grain boundaries; RTA; defect density; gettering; grooving; porous silicon; Al-gettering; CZOCHRALSKI-GROWN SILICON; SOLAR-CELL PERFORMANCE; MULTICRYSTALLINE SILICON; POLYCRYSTALLINE SILICON; OXYGEN; RECOMBINATION; PRECIPITATION; IMPROVEMENT; IMPURITIES; CARRIER;
D O I：
10.1002/pssc.201200193
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work, we analyze the effect of three gettering procedures on the variation of the grain boundaries (GBs) defect density in multicrystalline silicon (mc-Si). The effective defect density (N-B) was calculated using a theoretical model where we consider the potential barrier induced by the GB as being due to structural defects and impurities. Results are compared to those obtained from C-V measurements. The potential barrier was evaluated from the dark current-voltage (I-V) characteristic performed across the GB. In addition to the Rapid Thermal Annealing (RTA), we use aluminum (Al) in the first gettering procedure, in the second we use porous silicon (PS), whereas in the third one, we realize a chemical damage (grooving). Mc-Si wafers were annealed in an infrared furnace in the same conditions, at temperatures ranging from 600 degrees C to 1000 degrees C. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1937 / 1941
页数：5
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