Microstructural evolution and phase transformation kinetics of pulse-electroplated Ni-Cu-P alloy film during annealing

被引：11

作者：

Hu, Yang ^{[1
]}

Yang, Lei ^{[2
]}

Shi, Changdong ^{[2
]}

Tang, Wenming ^{[1
]}

机构：

[1] Hefei Univ Technol, Sch Mat Sci & Engn, Hefei 230009, Peoples R China

[2] China Elect Technol Corp, Inst 43, Dept Microelect Packaging, Hefei 230088, Peoples R China

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2013年 / 141卷 / 2-3期

关键词：

Thin films; Annealing; Differential scanning calorimetry (DSC); Microstructure; Phase transitions; NI-3.6 AT.PERCENT P; THERMAL-STABILITY; GRAIN-GROWTH; CRYSTALLIZATION; BEHAVIOR; DEPOSITS;

D O I：

10.1016/j.matchemphys.2013.06.030

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ni-Cu-P alloy film of 4.0 wt%Cu and 10.1 wt%P was deposited on Cu substrate through pulse electroplating. Microstructures, morphologies and phases of the alloy films were studied. Phase transformation kinetics of the alloy films during the DSC annealing was also investigated. The results show that the as-deposited Ni-Cu-P alloy film is composed of an amorphous Ni(Cu,P) matrix in which 5 nm spherical Ni(Cu) grains are embedded. After the alloy film annealed at 673 K, Ni5P2 precipitates from the amorphous matrix; and at 773 K, Ni5P2 transforms into Ni3P, which is spherical and about 10 nm in diameter. Meanwhile, the nanocrystalline Ni(Cu) grains grow up to be regular hexagon and 60-70 nm in diameter. The activation energies related to the precipitation of Ni5P2 from the Ni(Cu,P) matrix and the phase transformation of Ni3P from Ni5P2 were deduced to be 178.3 and 238.4 kJ mol(-1), respectively. (c) 2013 Elsevier B.V. All rights reserved.

引用

页码：944 / 950

页数：7

共 32 条

[1] ON THE MECHANISM OF ELECTROLESS NI-P PLATING [J].

ABRANTES, LM ;

CORREIA, JP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (09) :2356-2360

[2] Electroless deposition of Ni-Cu-P alloy and study of the influences of some parameters on the properties of deposits [J].

Ashassi-Sorkhabi, H ;

Dolati, H ;

Parvini-Ahmadi, N ;

Manzoori, J .

APPLIED SURFACE SCIENCE, 2002, 185 (3-4) :155-160

[3] Pulsed electrodeposition of nanocrystalline Cu-Ni alloy films and evaluation of their characteristic properties [J].

Baskaran, I. ;

Narayanan, T. S. N. Sankara ;

Stephen, A. .

MATERIALS LETTERS, 2006, 60 (16) :1990-1995

[4] AN INSITU TEM STUDY OF THE THERMAL-STABILITY OF NANOCRYSTALLINE NI-P [J].

BOYLAN, K ;

OSTRANDER, D ;

ERB, U ;

PALUMBO, G ;

AUST, KT .

SCRIPTA METALLURGICA ET MATERIALIA, 1991, 25 (12) :2711-2716

[5] The reactions between electroless Ni-Cu-P deposit and 63Sn-37Pb flip chip solder bumps during reflow [J].

Chen, CJ ;

Lin, KL .

JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (08) :1007-1014

[6] Electroless Ni-Cu-P barrier between Si/Ti/Al pad and Sn-Pb flip-chip solder bumps [J].

Chen, CJ ;

Lin, KL .

IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, 2001, 24 (04) :691-697

[7] Fabrication and adhesion of low stress electroless Ni-Cu-P bump on copper pad [J].

Chen, CJ ;

Lin, KL .

50TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE - 2000 PROCEEDINGS, 2000, :874-877

[8] Morphology and kinetic study of the interfacial reaction between the Sn-3.5Ag solder and electroless Ni-P metallization [J].

Chen, Z ;

He, M ;

Qi, GJ .

JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (12) :1465-1472

[9]

CHUN JC, 1999, J ELECTROCHEM SOC, V146, P137

[10]

Cullity B. D., ELEMENTS XRAY DIFFRA

← 1 2 3 4 →