Effects of deposition parameters on tantalum films deposited by direct current magnetron sputtering

被引：35

作者：

Zhou, Y. M. ^{[1
]}

Xie, Z. ^{[1
]}

Xiao, H. N. ^{[2
]}

Hu, P. F. ^{[2
]}

He, J. ^{[3
]}

机构：

[1] Hunan Univ, Sch Phys & Microelect Sci, Changsha 410082, Hunan, Peoples R China

[2] Hunan Univ, Coll Mat Sci & Engn, Changsha 410082, Hunan, Peoples R China

[3] China Elect Technol Grp Corp, Res Inst 44, Chongqing 400060, Peoples R China

来源：

VACUUM | 2008年 / 83卷 / 02期

关键词：

Tantalum; Deposition by sputtering; X-ray diffraction; Crystal structure;

D O I：

10.1016/j.vacuum.2008.07.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Effects of deposition parameters on tantalum films deposited by direct current magnetron sputtering were studied. The results indicated that the electrical properties were relative to the oxygen and other impurities rather than to growth orientation. As the sputtering power increases from 25 to 100 W, the preferred-growth orientation of Ta films changes from (200) to (202) and the oxygen and impurities content in the films decrease. The temperature coefficient of resistance also reduces from -289.79 to -116.65 ppm/degrees C. The O/Ta ratio decrease and grain size reduction related to a change of electrical resistivity were observed at substrate temperatures in the range 300-500 degrees C. At 650 degrees C, partial stable alpha-Ta associated with a sharp decrease of the electrical resistivity was also found. Crown Copyright (C) 2008 Published by Elsevier Ltd. All rights reserved.

引用

页码：286 / 291

页数：6

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