New Design of Quantized Hall Resistance Array Device

被引:21
作者
Oe, Takehiko [1 ]
Matsuhiro, Kenjiro [1 ]
Itatani, Taro [2 ]
Gorwadkar, Sucheta [2 ]
Kiryu, Shogo [3 ]
Kaneko, Nobu-hisa [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Natl Metrol Inst Japan, Tsukuba, Ibaraki 3058563, Japan
[2] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
[3] Tokyo City Univ, Fac Engn, Tokyo 1588557, Japan
关键词
DC resistance standards; photosensitive polyimide; quantized Hall resistance (QHR); quantum Hall array resistance standard (QHARS); quantum Hall effect (QHE); STANDARDS;
D O I
10.1109/TIM.2012.2228750
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We propose a new design for a 10-k Omega quantized Hall resistance (QHR) array device. This design realizes quantized resistance values that approach decade values with fewer Hall bars. In this design, the 10-k Omega QHR array device consists of only 16 Hall bars, and this number is about 16 times lower than that in the previous design, although the nominal value is identical to the previous one. The nominal value of this device shows a relative difference of only 0.034 mu Omega/Omega, based on RK-90 (= 25 812.807 Omega), from the exact value of 10 k Omega. This fact might allow us to evaluate each Hall bar in the array device. The parameters of this 10-k Omega QHR array device were measured by a conventional QHR and cryogenic current comparator using the 100-Omega standard resistor. According to the measurement, the value of the 10-k Omega QHR array device agrees with its nominal value within around one part in 10(8). In the same manner, new combinations of Hall bars were designed for the 100-Omega-1-M Omega range.
引用
收藏
页码:1755 / 1759
页数:5
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