The reduction of base resistance of SiGe Si HBT via ion implantation and side-wall oxide self-aligned technique

被引：2

作者：

Xu, C ^{[1
]}

Zhang, JY ^{[1
]}

Zhao, LX ^{[1
]}

Deng, J ^{[1
]}

Tao, CB ^{[1
]}

Gao, G ^{[1
]}

Du, JY ^{[1
]}

Luo, J ^{[1
]}

Zou, DS ^{[1
]}

Chen, JX ^{[1
]}

Shen, GD ^{[1
]}

机构：

[1] Beijing Polytech Univ, Dept Elect Engn, Beijing 100022, Peoples R China

来源：

1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS | 1998年

关键词：

SiGe Si HBT; base resistance; ion implantation;

D O I：

10.1109/ICSICT.1998.786135

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ion implantation and side-wall oxide self-aligned technique was used to reduce the extrinsic base resistance of SiGe HBT. The sheet resistance of SiGe layer was reduced over 20 times under proper implantation and annealing parameters, and ohmic contacting was also improved. This can greatly enhance the frequency performance and reduce the noise figure of SiGe HBT. The SiGe sheet resistance is sensitive to the implantation and annealing parameters. For our samples implantation dosage of 10(16)/cm(3) and energy of 35kev,annealing temperature from 960 degrees C to 1000 degrees C is suitable.

引用

页码：776 / 779

页数：2

共 2 条

[1] Fabrication of high-speed InP/InGaAs/InP DHBT with a new self-aligned metallization technique for reduced base resistance
Choi, Kwangsik
Yu, Daekyu
Lee, Kyungho
Kim, Bumman
Zhu, H.
Vargason, K.
Kuo, J. M.
Pinsukanjana, P.
Kao, Y. C.
SOLID-STATE ELECTRONICS, 2006, 50 (9-10) : 1483 - 1488
[2] Simplified process for high efficiency, self-aligned IBC c-Si solar cells combining ion implantation and epitaxial growth: Design and fabrication
Ingenito, Andrea
Isabella, Olindo
Zeman, Miro
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2016, 157 : 354 - 365

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