Photoluminescence of ZnO Thin Films on Si Substrate

被引：0
作者：
Bartkiewicz, K. [1 ]
Lukasiak, Z. [1 ]
Zawadzka, A. [1 ]
Plociennik, P. [1 ]
Korcala, A. [1 ]
机构：
[1] Nicolaus Copernicus Univ, Fac Phys Astron & Informat, PL-87100 Torun, Poland
来源：
2010 12TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON) | 2011年
关键词：
photoluminescence; zinc oxide; thin film; sol-gel; temperature dependence; emission;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper photoluminescence (PL) properties of ZnO (zinc oxide) thin films on Si substrates are presented. Samples were prepared by sol-gel method. Photoluminescence experiments where carried out at different temperatures (10 K - 300 K). Registered spectra exhibit multiband structure witch depends on the temperature and preparation conditions.
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页数：4
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