Room-temperature continuous-wave 1.55 μm GalnNAsSb laser on GaAs

被引：46

作者：

Bank, SR ^{[1
]}

Bae, HP ^{[1
]}

Yuen, HB ^{[1
]}

Wistey, MA ^{[1
]}

Goddard, LL ^{[1
]}

Harris, JS ^{[1
]}

机构：

[1] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA

来源：

ELECTRONICS LETTERS | 2006年 / 42卷 / 03期

关键词：

D O I：

10.1049/el:20064022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first low-threshold 1.55 pin lasers grown on GaAs are reported. Lasing at 1.55 pin was observed from a 20 x 2400 pin as-cleaved device with a room-temperature continuous-wave threshold current density of 579 A/cm(2), external efficiency of 41%, and 130 mW peak output power. The pulsed threshold current density was 550 A/cm(2) with > 600 mW peak output power.

引用

页码：156 / 157

页数：2

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