Room-temperature continuous-wave 1.55 μm GalnNAsSb laser on GaAs

被引：45
|
作者：
Bank, SR [1 ]
Bae, HP [1 ]
Yuen, HB [1 ]
Wistey, MA [1 ]
Goddard, LL [1 ]
Harris, JS [1 ]
机构：
[1] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA
来源：
ELECTRONICS LETTERS | 2006年 / 42卷 / 03期
关键词：
D O I：
10.1049/el:20064022
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The first low-threshold 1.55 pin lasers grown on GaAs are reported. Lasing at 1.55 pin was observed from a 20 x 2400 pin as-cleaved device with a room-temperature continuous-wave threshold current density of 579 A/cm(2), external efficiency of 41%, and 130 mW peak output power. The pulsed threshold current density was 550 A/cm(2) with > 600 mW peak output power.
引用
收藏
页码：156 / 157
页数：2
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