Long-distance spin transport in high-mobility graphene on hexagonal boron nitride

被引：157

作者：

Zomer, P. J. ^{[1
]}

Guimaraes, M. H. D. ^{[1
]}

Tombros, N. ^{[1
]}

van Wees, B. J. ^{[1
]}

机构：

[1] Univ Groningen, Zernike Inst Adv Mat, Groningen, Netherlands

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 16期

关键词：

EPITAXIAL GRAPHENE; SUSPENDED GRAPHENE; RELAXATION; PRECESSION; DEVICES; VALVE;

D O I：

10.1103/PhysRevB.86.161416

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We performed spin transport measurements on boron nitride based single layer graphene devices with mobilities up to 40 000 cm(2) V-1 s(-1). We could observe spin transport over lengths up to 20 mu m at room temperature, the largest distance measured so far for graphene. Due to enhanced charge-carrier diffusion, spin relaxation lengths are measured up to 4.5 mu m. The relaxation times are similar to values for lower quality SiO2-based devices, around 200 ps. We find that the relaxation rate is determined in almost equal measures by the Elliott-Yafet and D'Yakonov-Perel mechanisms.

引用

页数：4

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