Evaluation of the WOx Film Properties for Resistive Random Access Memory Application

被引：2

作者：

Chen, Yi-Yueh ^{[1
,2
]}

Chien, Wei-Chih ^{[3
]}

Lee, Ming-Hsiu ^{[3
]}

Chen, Yi-Chou ^{[3
]}

Chuang, Alfred T. H. ^{[3
]}

Hong, Tian-Jue ^{[1
]}

Lin, Su-Jien ^{[1
]}

Wu, Tai-Bor ^{[1
]}

Lu, Chih-Yuan ^{[3
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Macronix Int Co Ltd, Macronix Qual Engn Ctr, Hsinchu 300, Taiwan

[3] Macronix Int Co Ltd, Macronix Emerging Cent Lab, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 04期

关键词：

THERMAL-OXIDATION; PARTIAL-PRESSURE;

D O I：

10.1143/JJAP.51.04DD15

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation condition, microstructure, and growth kinetics of the WOx layer for WOx resistive random access memory are investigated. To understand the optimal condition for the rapid thermal oxidation process which forms the WOx layer, various annealing temperature and annealing time are systemically studied through transmission electron microscopy, X-ray diffraction, Raman spectra analyses and electrical characterizations. The growth kinetics for WOx under rapid thermal oxidation is found similar to the one for thermal oxidation on silicon. The electrical forming voltages of the WOx cells are also found independent from the oxide thickness, which further suggests the switching behavior of WOx resistive random access memory takes place at the interface but not the bulk. (C) 2012 The Japan Society of Applied Physics

引用

页数：5

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