Interfacial Reaction and Shear Strength of SnAgCu/Ni/Bi2Te3-Based TE Materials During Aging

被引：14
作者：
Jing, Hongyang [1 ,2 ]
Li, Yuan [1 ,2 ]
Xu, Lianyong [1 ,2 ]
Han, Yongdian [1 ,2 ]
Lu, Guoquan [1 ,2 ]
Zhang, Hao [1 ,2 ]
机构：
[1] Tianjin Univ, Sch Mat Sci & Engn, Tianjin 300072, Peoples R China
[2] Tianjin Key Lab Adv Joining Technol, Tianjin 300072, Peoples R China
来源：
JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE | 2015年 / 24卷 / 12期
基金：
中国国家自然科学基金; 高等学校博士学科点专项科研基金;
关键词：
interfacial reaction; Ni diffusion barrier layer; reliability; SAC305; thermoelectric device; THERMOELECTRIC-MATERIALS; DIFFUSION; BISMUTH; NI; CONTACTS; SOLDER; COPPER;
D O I：
10.1007/s11665-015-1809-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
As a diffusion barrier layer, Ni is widely applied in power electronics packaging, especially in thermoelectric devices. This paper presents the variation of Ni diffusion barrier layer during aging and failure mechanisms of thermoelectric device joints. The thermoelectric joint consists of Sn96.5Ag3.0Cu0.5 (SAC305) solder and Bi2Te3-based thermoelectric materials such as Bi0.5Sb1.5Te3 and Bi1.8Sb0.2Se0.15Te2.85 during service. The result shows that with the increasing aging time, Ni layer was constantly consumed by SAC305 and Bi2Te3-based thermoelectric materials simultaneously. The reaction products are (Cu,Ni)(6)Sn-5 and NiTe or Ni(Bi,Te), respectively. Besides, the shear strength of SAC305/Bi0.5Sb1.5Te3 joint or SAC305/Bi1.8Sb0.2Se0.15Te2.85 joint gets gradually decreased and thermoelectric conversion performance gets worse. Meantime, the different failure mechanisms are also compared between SAC305/Bi0.5Sb1.5Te3 couple joints and SAC305/Bi1.8Sb0.2Se0.15Te2.85 couple joints.
引用
收藏
页码：4844 / 4852
页数：9
相关论文
共 22 条
  • [1] Diffusion at interfaces of micro thermoelectric devices
    Bae, Nam-Ho
    Han, Seungwoo
    Lee, Kwang Eun
    Kim, Byeongil
    Kim, Seon-Tai
    [J]. CURRENT APPLIED PHYSICS, 2011, 11 (05) : S40 - S44
  • [2] Decomposition of Cu6Sn5 particles in solder for the growth of a ternary (Cu1-xNix)6Sn5 layer on a Ni substrate
    Chung, Bo-Mook
    Hong, Kyoung-Kook
    Huh, Joo-Youl
    [J]. METALS AND MATERIALS INTERNATIONAL, 2009, 15 (03) : 487 - 492
  • [3] Modeling, experimental study and optimization on low-temperature waste heat thermoelectric generator system
    Gou, Xiaolong
    Xiao, Heng
    Yang, Suwen
    [J]. APPLIED ENERGY, 2010, 87 (10) : 3131 - 3136
  • [4] Interface Characterization of Cobalt Contacts on Bismuth Selenium Telluride for Thermoelectric Devices
    Gupta, R. P.
    Iyore, O. D.
    Xiong, K.
    White, J. B.
    Cho, Kyeongjae
    Alshareef, H. N.
    Gnade, B. E.
    [J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2009, 12 (10) : H395 - H397
  • [5] Low Resistance Ohmic Contacts to Bi2Te3 Using Ni and Co Metallization
    Gupta, Rahul P.
    Xiong, K.
    White, J. B.
    Cho, Kyeongjae
    Alshareef, H. N.
    Gnade, B. E.
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (06) : H666 - H670
  • [6] Interface characterization of nickel contacts to bulk bismuth tellurium selenide
    Iyore, O. D.
    Lee, T. H.
    Gupta, R. P.
    White, J. B.
    Alshareef, H. N.
    Kim, M. J.
    Gnade, B. E.
    [J]. SURFACE AND INTERFACE ANALYSIS, 2009, 41 (05) : 440 - 444
  • [7] A study on interfacial reactions between electroless Ni-P under bump metallization and 95.5Sn-4.0Ag-0.5Cu alloy
    Jeon, YD
    Nieland, S
    Ostmann, A
    Reichl, H
    Paik, KW
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (06) : 548 - 557
  • [8] Characterizations of solid-state microwave-synthesized Sb2Te3-based alloys with various compositions of bismuth in Bi2xSb2(1-x)Te3
    Kadhim, A.
    Hmood, A.
    Abu Hassan, H.
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2012, 15 (05) : 549 - 554
  • [9] Kirkendall EO, 1942, T AM I MIN MET ENG, V147, P104
  • [10] Diffusion of nickel and tin in p-type (Bi,Sb)2Te3 and n-type Bi2(Te,Se)3 thermoelectric materials
    Lan, Y. C.
    Wang, D. Z.
    Chen, G.
    Ren, Z. F.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (10)
123