Fabrication of Amorphous Silicon Carbide Films from Decomposition of Tetramethylsilane using ECR plasma of Ar

Mechanically-hard hydrogenated amorphous silicon carbide (a-SiCx:H) films were formed from the decomposition of Si(CH3)(4) using the electron-cyclotron resonance plasma flow of Ar. An external radio-frequency (RF) voltage was applied to the substrate with the negative self-bias voltage (-V-RF) of 0-100 V. Compositional analysis was made with a combination of Rutherford backscattering and elastic recoil detection analysis. The C/Si ratios of films were 2.2-2.7. Film hardness was measured with a nano-indentation testing equipment. Chemical bonding was analyzed using carbon-K near edge X-ray absorption fine structure (C-K NEXAFS) spectroscopy using an accelerator NewSUBARU. The peak-fitting analysis of the C-K NEXAFS spectra yielded the sp(2)/(sp(2)+sp(3)) ratios, being fully correlated with film hardness. With supported by the IR and Raman spectroscopic measurements, the change of the chemical structure induced by -V-RF was discussed.