Voltage-controlled high-frequency oscillations based on suspended semiconducting carbon nanotubes

被引:9
作者
Dragoman, D
Dragoman, M
机构
[1] Univ Bucharest, Dept Phys, Bucharest 077125, Romania
[2] Natl Inst Res & Dev Microtechnol, IMT, Bucharest 023573, Romania
关键词
D O I
10.1103/PhysRevB.73.125417
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A series of tunable negative differential conductance regions at room temperature is demonstrated in semiconducting carbon nanotubes suspended over a trench with a metallic gate at its bottom. The substrateless carbon nanotube is in fact a wide quantum well that experiences a series of negative differential conductance regions due to the very large difference between the effective masses in the well and the tunneling contacts. The positions of these regions can be tuned by modifying the gate voltage. Since the negative differential conductance is the key element of high-frequency oscillators, the suspended nanotube is a voltage-controlled oscillator able to work up to THz frequencies. This device could have important applications in high-frequency nanoelectronic devices and multivalued logic.
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页数:4
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