Fast and intense photoluminescence in a SiGe nano-layer embedded in multilayers of Si/SiGe clusters

被引：7

作者：

Mala, S. A. ^{[1
]}

Tsybeskov, L. ^{[1
]}

Lockwood, D. J. ^{[2
]}

Wu, X. ^{[2
]}

Baribeau, J. -M. ^{[2
]}

机构：

[1] New Jersey Inst Technol, Dept Elect & Comp Engn, Newark, NJ 07102 USA

[2] Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 03期

基金：

美国国家科学基金会;

关键词：

LIGHT-EMITTING DIODE; QUANTUM-WELLS; SUPERLATTICES; SILICON; STRAIN; GE; NANOSTRUCTURES; NANOCRYSTALS; LUMINESCENCE; GAIN;

D O I：

10.1063/1.4813560

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An intense photoluminescence (PL) peaking near 0.9 eV is emitted by a single Si1-xGex nanometer-thick layer (NL) with x approximate to 8% incorporated into Si/Si0.6Ge0.4 cluster multilayers (CMs). The SiGe NL PL does not saturate in output intensity with up to 50 mJ/cm(2) of excitation energy density, and it has nearly a 1000 times shorter lifetime compared to CM PL, which peaks at similar to 0.8 eV. These dramatic differences in observed PL properties are attributed to different compositions and structures of the Si/SiGe NL and CM hetero-interfaces. (C) 2013 AIP Publishing LLC.

引用

页数：3

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