Role of lanthanum in thermoluminescence properties of La2x Lu2(1-x)SiO5:Ce crystals

被引:5
作者
Wang, Tiantian [1 ,2 ]
Ding, Dongzhou [1 ,3 ]
Chen, Xiaopu [1 ,2 ]
Hu, Zewang [1 ,2 ]
Zhang, Zhiming [4 ,5 ]
Hou, Wei [3 ]
Shi, Junjie [3 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, 1295 Dingxi Rd, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, 19 A Yuquan Rd, Beijing 100049, Peoples R China
[3] R&D Ctr Shanghai Inst Ceram, 215 Chengbei Rd, Shanghai 201899, Peoples R China
[4] Inst High Energy Phys, 19 B Yuquan Rd, Beijing 100049, Peoples R China
[5] Beijing Engn Res Ctr Radiog Tech & Equipment, 19 B Yuquan Rd, Beijing 100049, Peoples R China
基金
中国国家自然科学基金;
关键词
SCINTILLATION PROPERTIES; LSO; LU2SIO5; GROWTH;
D O I
10.1007/s10853-018-2011-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The influence of lanthanum content on thermally stimulated luminescence properties of La-2x Lu2(1-x)SiO5:Ce (x = 0, 0.08, 0.18 and 1.50 at.%) crystals was investigated. Trapping parameters such as electron trap depth E (t) and electron traps content n (0) were fitted with general order kinetic function. According to the results of the VUV transmittance spectra and band gap calculation which based on the density functional theory with the generalized gradient approximation of Perdew-Burke-Ernzerhof (GGA-PBE), band structure of the crystals and recombination mechanisms of released electrons were further studied. Results showed that there were mainly two kinds of electron traps, namely shallow (E (t) ae 0.2 eV) and deep (E (t) ae 1.0 eV) traps. With the increasing of La content, the concentration of deep traps was obviously depressed, and the depth of deep traps decreased at the same time, which was explained by suggesting the downward shift of the bottom of conduction band.
引用
收藏
页码:6450 / 6458
页数:9
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