Design and Growth of Visible-Blind and Solar-Blind III-N APDs on Sapphire Substrates

被引：22

作者：

Suvarna, Puneet ^{[1
]}

Tungare, Mihir ^{[1
]}

Leathersich, Jeffrey M. ^{[1
]}

Agnihotri, Pratik ^{[1
]}

Shahedipour-Sandvik, F. ^{[1
]}

Bell, L. Douglas ^{[2
]}

Nikzad, Shouleh ^{[2
]}

机构：

[1] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12222 USA

[2] CALTECH, Jet Prop Lab, Pasadena, CA USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2013年 / 42卷 / 05期

基金：

美国国家航空航天局;

关键词：

avalanche photodiode; solar-blind; AlGaN on sapphire; pulsed MOCVD; ultraviolet photodiode; SUPERLATTICES;

D O I：

10.1007/s11664-013-2537-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN-based visible-blind and AlGaN-based solar-blind avalanche photodiodes (APDs) have been grown and fabricated on sapphire substrates. The GaN p-i-n APDs show low dark current with high gain. The AlGaN layers for the Al0.55Ga0.45N-based APDs are grown using a newly developed pulsed metalorganic chemical vapor deposition (MOCVD) process, and the material characterization results show excellent material quality. The spectral responsivity of the devices show a bandpass characteristic with cutoffs in the ultraviolet (UV) visible-blind and solar-blind spectrum for GaN- and Al0.55Ga0.45N-based APDs, respectively.

引用

页码：854 / 858

页数：5

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