Electrical effects of Ar plasma damage on GaN diode rectifiers

被引：5

作者：

Dang, G ^{[1
]}

Zhang, AP

Cao, XA

Ren, F

Cho, H

Pearton, SJ

Shul, RJ

Zhang, L

Hickman, R

Van Hove, JM

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] Sandia Natl Labs, Albuquerque, NM 87185 USA

[4] SVT Associates, Eden Prairie, MN 55344 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 1999年 / 2卷 / 09期

关键词：

D O I：

10.1149/1.1390874

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Relatively small (less than or equal to 15%) decreases in reverse breakdown voltage of GaN diodes are observed after exposure to Ar inductively coupled plasmas over a wide range of conditions. However, the low-bias forward currents are increased by up to two orders of magnitude. Both ion energy and ion flux are important in determining the changes in electrical properties of the diodes. (C) 1999 The Electrochemical Society. S1099-0062(99)04-016-X. All rights reserved.

引用

页码：472 / 474

页数：3

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