Nanoparticle-based flexible inverters with a vertical structure

被引：1
作者：
Yun, Junggwon [1 ]
Cho, Kyoungah [1 ]
Kim, Sangsig [1 ]
机构：
[1] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea
来源：
THIN SOLID FILMS | 2013年 / 539卷
关键词：
II-VI semiconductors; Electronic circuits; Nanocrystals; Flexible substrate; THIN-FILM TRANSISTORS; ELECTRONICS; HYSTERESIS; INSULATOR;
D O I：
10.1016/j.tsf.2013.04.147
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the construction and characterization of a representative vertical inverter with a nanoparticle (NP)-based p-channel thin-film transistor (TFT) and a NP-based n-channel TFT on a flexible substrate. The vertical inverter consists of a p-type HgTe NP-based TFT on the first-stair layer and an n-type HgSe NP-based TFT on the second-stair layer. In the vertical inverter, an isolation layer made of polyvinyl alcohol prevents the cross talk between these TFTs. The vertical inverter exhibits the typical inverter characteristics with a gain of 4, and the reproducible operation was obtained in the upward and downward bending states, as well as in the flat state. Moreover, the inverter characteristics were maintained even after 1000 bending cycles with 0.7% strain. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：256 / 259
页数：4
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