The optical band gap of Gd-doped CeO2 thin films as function of temperature and composition

被引：52

作者：

Ruiz-Trejo, Enrique ^{[1
]}

机构：

[1] Univ Nacl Autonoma Mexico, Fac Quim, Dept Fis & Quim Teor, Mexico City 04510, DF, Mexico

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2013年 / 74卷 / 04期

关键词：

Ceramics; Optical materials; Raman spectroscopy; Defects; Optical properties; CERIUM OXIDE; X-RAY; ABSORPTION; RAMAN; DEPOSITION;

D O I：

10.1016/j.jpcs.2012.12.014

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Thin films of Ce1-xGdxO2-x/2 (x=0, 0.1, 0.2, 0.3) were prepared by Pulse Laser Deposition and characterized at room temperature by SEM, XRD and Raman spectroscopy. The coefficient of absorption of the 200 nm thin films was measured between room and liquid nitrogen temperatures. The direct and indirect optical band gaps were estimated using Tauc plots. Substitution of Ce for Gd was found to have a significant effect on the coefficient of absorption, although there is a weak band gap dependence upon temperature. This was attributed to the poor overlap of the 4f orbitals of the lanthanides in gadolinia-doped ceria. An expression for the direct and indirect optical band gap of each gadolinia-doped ceria as a function of temperature is given. As an example, for ceria the direct optical band gap is 3.66 +/- 0.008 eV -1.25 +/- 0.05 x 10(-4) eV K. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：605 / 610

页数：6

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