Analysis of drain-to-body band-to-band tunneling in double gate MOSFET

被引：8

作者：

Ananthan, H ^{[1
]}

Bansal, A ^{[1
]}

Roy, K ^{[1
]}

机构：

[1] Purdue Univ, Dept ECE, W Lafayette, IN 47907 USA

来源：

2005 IEEE International SOI Conference, Proceedings | 2005年

关键词：

D O I：

10.1109/SOI.2005.1563573

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical model is proposed for drain-to-body hand-to-hand tunneling leakage in nanoscale symmetric and asymmetric double-gate MOS devices. The model is used to analyze the impact of technology and circuit parameters, and suggest ways of minimizing this leakage.

引用

页码：159 / 160

页数：2