High-frequency, long-wavelength resonant-cavity-enhanced InGaAs MSM photodetectors

被引：0
|
作者：
Strittmatter, A
Kollakowski, S
Droge, E
Bottcher, EH
Bimberg, D
机构：
来源：
22ND EUROPEAN CONFERENCE ON OPTICAL COMMUNICATIONS, PROCEEDINGS, VOLS 1-6: CO-LOCATED WITH: 2ND EUROPEAN EXHIBITION ON OPTICAL COMMUNICATION - EEOC '96 | 1996年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Resonant-cavity-enhanced InP/InGaAs metal-semiconductor-metal photodetectors for high-frequency and high-efficiency operation at 1.31 mu m wavelength under rear illumination are demonstrated. An external quantum efficiency of 77 % and a 3-dB bandwidth of 10 GHz are achieved with an InGaAs absorber thickness of 300 nm.
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页码：A145 / A148
页数：4
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