Highly strained direct bandgap Germanium cavities for a monolithic laser on Si

被引：0

作者：

Zabel, T. ^{[1
]}

Marin, E. ^{[1
]}

Geiger, R. ^{[1
]}

Bozon, C. ^{[4
]}

Tardif, S. ^{[3
]}

Guilloy, K. ^{[3
]}

Gassenq, A. ^{[2
]}

Escalante, J. ^{[2
]}

Niquet, Y. M. ^{[3
]}

Duchemin, I. ^{[3
]}

Rothman, J. ^{[2
]}

Pauc, N. ^{[2
]}

Rieutord, F. ^{[3
]}

Reboud, V. ^{[2
]}

Calvo, V. ^{[3
]}

Hartmann, J. M. ^{[2
]}

Widiez, J. ^{[2
]}

Tchelnokov, A. ^{[2
]}

Faist, J. ^{[4
]}

Sigg, H. ^{[1
]}

机构：

[1] Paul Scherrer nstitute, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland

[2] CEA LETI, Minatec Campus, F-38054 Grenoble, France

[3] Univ Grenoble Alpes, CEA INAC, F-38000 Grenoble, France

[4] ETH, Inst Quantum Elect, CH-8093 Zurich, Switzerland

来源：

2016 IEEE 13TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cavity enhanced photoluminescence at a wavelength as long as 5 mu m is obtained in uniaxial tensile strained GeOI micro-bridges. We show, using temperature dependent photoluminescence spectroscopy, a crossover to fundamental direct bandgap and reveal from a mode analysis the free carrier induced loss increase.

引用

页码：40 / 41

页数：2

共 6 条

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