Demonstration of Ultralow Bit Error Rates for Spin-Torque Magnetic Random-Access Memory With Perpendicular Magnetic Anisotropy

被引：70

作者：

Nowak, J. J. ^{[1
]}

Robertazzi, R. P. ^{[1
]}

Sun, J. Z. ^{[1
]}

Hu, G. ^{[1
]}

Abraham, David W. ^{[1
]}

Trouilloud, P. L. ^{[1
]}

Brown, S. ^{[1
]}

Gaidis, M. C. ^{[1
]}

O'Sullivan, E. J. ^{[1
]}

Gallagher, W. J. ^{[1
]}

Worledge, D. C. ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, IBM MagIC MRAM Alliance, Yorktown Hts, NY 10598 USA

来源：

IEEE MAGNETICS LETTERS | 2011年 / 2卷

关键词：

Spin electronics; spin-transfer torque; magnetic random-access memory (MRAM); magnetic switching;

D O I：

10.1109/LMAG.2011.2155625

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bit error rates below 10(-11) are reported for a 4-kb magnetic random access memory chip, which utilizes spin transfer torque writing on magnetic tunnel junctions with perpendicular magnetic anisotropy. Tests were performed at wafer level, and error-free operation was achieved with 10 ns write pulses for all nondefective bits during a 66-h test. Yield in the 4-kb array was limited to 99% by the presence of defective cells. Test results for both a 4-kb array and individual devices are consistent and predict practically error-free operation at room temperature.

引用

页数：4

共 15 条

[1] Spin-transfer pulse switching: From the dynamic to the thermally activated regime [J].

Bedau, D. ;

Liu, H. ;

Sun, J. Z. ;

Katine, J. A. ;

Fullerton, E. E. ;

Mangin, S. ;

Kent, A. D. .

APPLIED PHYSICS LETTERS, 2010, 97 (26)

[2]

Chung S, 2010, INT EL DEVICES MEET

[3] Physical limitations to efficient high-speed spin-torque switching in magnetic tunnel junctions [J].

Heindl, R. ;

Rippard, W. H. ;

Russek, S. E. ;

Kos, A. B. .

PHYSICAL REVIEW B, 2011, 83 (05)

[4]

Ikeda S, 2010, NAT MATER, V9, P721, DOI [10.1038/NMAT2804, 10.1038/nmat2804]

[5]

Kishi T, 2008, INT EL DEVICES MEET, P309

[6] Development of Embedded STT-MRAM for Mobile System-on-Chips [J].

Lee, Kangho ;

Kang, Seung H. .

IEEE TRANSACTIONS ON MAGNETICS, 2011, 47 (01) :131-136

[7] A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology [J].

Min, Tai ;

Chen, Qiang ;

Beach, Robert ;

Jan, Guenole ;

Horng, Cheng ;

Kula, Witold ;

Torng, Terry ;

Tong, Ruth ;

Zhong, Tom ;

Tang, Denny ;

Wang, Pokang ;

Chen, Mao-min ;

Sun, J. Z. ;

Debrosse, J. K. ;

Worledge, D. C. ;

Maffitt, T. M. ;

Gallagher, W. J. .

IEEE TRANSACTIONS ON MAGNETICS, 2010, 46 (06) :2322-2327

[8]

Oh SC, 2010, INT EL DEVICES MEET

[9]

ROBERTAZZI RP, UNPUB

[10] Current-driven excitation of magnetic multilayers [J].

Slonczewski, JC .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1996, 159 (1-2) :L1-L7

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