Electro-polymerization in porous silicon films

被引：0

作者：

Soni, RK ^{[1
]}

Fonseca, LF ^{[1
]}

Resto, O ^{[1
]}

Guadalupe, A ^{[1
]}

Weisz, SZ ^{[1
]}

机构：

[1] Univ Puerto Rico, Dept Phys, Rio Piedras, PR 00931 USA

来源：

MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS-1998 | 1999年 / 536卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Luminescent porous silicon films were created by electrochemical anodization of n-type substrate under light illumination. Semi-transparent conducting polypyrrole films wen deposited by electrochemical polymerization at a low current density. The SEM micrographs showed that the polymer film impregnates into the wide vertical pores of 1-5 mu m and grows sideways suggesting strong current distribution on the walls. The AFM images of polymer surface reveal nanometer size polymer aggregates on the porous layer. The impregnation of the polymer film due to sideways growth provides a useful mean to fabricate stable contact for light emitting diodes from porous silicon.

引用

页码：197 / 201

页数：5

共 8 条

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