Boron-doped Homoepitaxial Diamond CVD from Microwave Plasma-Activated Ethanol/Trimethyl Borate/Hydrogen Mixtures

被引：9

作者：

Belousov, Maxim E. ^{[1
]}

Mankelevich, Yuri A. ^{[1
]}

Minakov, Pavel V. ^{[1
]}

Rakhimov, Alexander T. ^{[1
]}

Suetin, Nikolay V. ^{[1
]}

Khmelnitskiy, Roman A. ^{[2
]}

Tal, Alexei A. ^{[2
]}

Khomich, Alexander V. ^{[3
]}

机构：

[1] Moscow MV Lomonosov State Univ, Skobeltsyn Inst Nucl Phys, Moscow 119991, Russia

[2] PN Lebedev Phys Inst, Moscow 119991, Russia

[3] Kotelnikov Inst Radio Engn & Elect, Fryazino 141120, Moscow Region, Russia

来源：

CHEMICAL VAPOR DEPOSITION | 2012年 / 18卷 / 10-12期

关键词：

Boron doping; Diamond homoepitaxy; Low roughness surface; PACVD; Plasma modeling; CHEMICAL-VAPOR-DEPOSITION; SINGLE-CRYSTAL DIAMOND; GAS-PHASE CHEMISTRY; MODELING INVESTIGATIONS; ACCEPTOR; CATHODOLUMINESCENCE;

D O I：

10.1002/cvde.201206993

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Boron-doped homoepitaxial diamond films are deposited from ethanol/trimethyl borate/hydrogen mixtures activated by microwave (MW) discharge plasma. The high smoothness, uniform distribution of boron atoms located predominantly in substitution positions, and low concentration of the nitrogen-compensating impurity is achieved. C2H5OH dissociation pathways in MW plasma-activated (PA)CVD reactor conditions, and the distribution of CxHyOz concentrations in the hot core of C2H5OH/H2 plasma are calculated. It is shown that the methyl radical is as responsible for diamond growth in C2H5OH/H2 mixtures as for a conventional CH4/H2 mixture.

引用

页码：302 / 308

页数：7

共 42 条

[1] Thick boron doped diamond single crystals for high power electronics [J].

Achard, J. ;

Silva, F. ;

Issaoui, R. ;

Brinza, O. ;

Tallaire, A. ;

Schneider, H. ;

Isoird, K. ;

Ding, H. ;

Kone, S. ;

Pinault, M. A. ;

Jomard, F. ;

Gicquel, A. .

[2] Diamond diodes and transistors [J].

Aleksov, A ;

Denisenko, A ;

Kunze, M ;

Vescan, A ;

Bergmaier, A ;

Dollinger, G ;

Ebert, W ;

Kohn, E .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (03) :S59-S66

[3] Influence of the substrate type on CVD grown homoepitaxial diamond layer quality by cross sectional TEM and CL analysis [J].

Araujo, D. ;

Alegre, M. P. ;

Garcia, A. J. ;

Navas, J. ;

Villar, M. P. ;

Bustarret, E. ;

Volpe, P. N. ;

Omnes, F. .

[4] TOWARDS A GENERAL CONCEPT OF DIAMOND CHEMICAL VAPOR-DEPOSITION [J].

BACHMANN, PK ;

LEERS, D ;

LYDTIN, H .

[5] Thick single crystal CVD diamond prepared from CH4-rich mixtures [J].

Bogdan, G. ;

De Corte, K. ;

Deferme, W. ;

Haenen, K. ;

Nesladek, M. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (12) :3063-3069

[6] Growth and characterization of near-atomically flat, thick homoepitaxial CVD diamond films [J].

Bogdan, G ;

Nesládek, M ;

D'Haen, J ;

Maes, J ;

Moshchalkov, VV ;

Haenen, K ;

D'Olieslaeger, M .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (11) :2066-2072

[7] Superconducting diamond: an introduction [J].

Bustarret, E. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (05) :997-1008

[8] Understanding the chemical vapor deposition of diamond: recent progress [J].

Butler, J. E. ;

Mankelevich, Y. A. ;

Cheesman, A. ;

Ma, Jie ;

Ashfold, M. N. R. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2009, 21 (36)

[9] BORON, DOMINANT ACCEPTOR IN SEMICONDUCTING DIAMOND [J].

CHRENKO, RM .

PHYSICAL REVIEW B, 1973, 7 (10) :4560-4567

[10] RESOLVED DONOR-ACCEPTOR PAIR-RECOMBINATION LINES IN DIAMOND LUMINESCENCE [J].

DISCHLER, B ;

ROTHEMUND, W ;

WILD, C ;

LOCHER, R ;

BIEBL, H ;

KOIDL, P .

PHYSICAL REVIEW B, 1994, 49 (03) :1685-1689

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