Formation mechanisms of GaN nanorods grown on Si(111) substrates

被引：12

作者：

Kwon, Y. H. ^{[2
]}

Lee, K. H. ^{[3
]}

Ryu, S. Y. ^{[2
]}

Kang, T. W. ^{[2
]}

You, C. H. ^{[1
]}

Kim, T. W. ^{[1
]}

机构：

[1] Hanyang Univ, Div Elect & Comp Engn, Adv Semicond Res Ctr, Seoul 133791, South Korea

[2] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

[3] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

来源：

APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 21期

关键词：

GaN nanorods; microstructural properties; formation mechanism; hydride vapor phase epitaxy;

D O I：

10.1016/j.apsusc.2008.05.096

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Scanning electron microscopy (SEM) images, transmission electron microscopy (TEM) images, and selected-area electron diffraction (SAED) patterns showed that vertically well aligned GaN nanorods with c-axis-oriented crystalline wurzite structures were grown on Si(1 1 1) substrates by using hydride vapor phase epitaxy. The high-resolution TEM (HRTEM) images showed that the crystallized GaN nanorods contained very few defects and that they were consisted of {(1) over bar1 0 0}, {0 0 0 1}, and {(1) over bar 10} facets. The formation mechanisms for the GaN nanorods grown on Si(1 1 1) substrates are described on the basis of the SEM, TEM, SAED pattern, and HRTEM results. (C) 2008 Elsevier B. V. All rights reserved.

引用

页码：7014 / 7017

页数：4

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