Influence of Interfacial Oxide Layers in Hf0.5Zr0.5O2 based ferroelectric capacitors on reliability performance

被引：4

作者：

Alcala, Ruben ^{[1
]}

Mehmood, Furgan ^{[1
]}

Vishnumurthy, Pramoda ^{[1
]}

Mittmann, Terence ^{[1
]}

Mikolajick, Thomas ^{[1
]}

Schroeder, Uwe ^{[2
]}

机构：

[1] NaMLab TU Dresden, Dresden, Germany

[2] NaMLab, Dresden, Germany

来源：

2022 14TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW 2022) | 2022年

关键词：

ferroelectric; Hf0.5Zr0.5O2; interfacial oxide layer; La2O3; Al2O3;

D O I：

10.1109/IMW52921.2022.9779287

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

La2O3, and Al2O3, were evaluated in the form of interfacial oxide layers as potential modifications to achieve increased electric field cycling endurance and polarization retention in comparison to the parent stand-alone Hf0.5Zr0.5O2 capacitor structure. Although it was possible to modify the ferroelectric and conductive behavior of the capacitor, the addition of an interfacial oxide layer also introduced parasitic effects which hampered the improvements. This, nevertheless, was material dependent, with La2O3 outperforming Al2O3 .

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收藏

页码：42 / 45

页数：4

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