Influence of the period thickness and composition on the electro-optical properties of type-II InAs/GaSb midwave infrared superlattice photodetectors

被引：40

作者：

Taalat, Rachid ^{[1
]}

Rodriguez, Jean-Baptiste ^{[1
]}

Delmas, Marie ^{[1
]}

Christol, Philippe ^{[1
]}

机构：

[1] Univ Montpellier 2, Inst Elect Sud, UMR CNRS 5214, F-34095 Montpellier 5, France

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2014年 / 47卷 / 01期

关键词：

type-2 InAs/GaSb superlattice; infrared photodetection;

D O I：

10.1088/0022-3727/47/1/015101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, the electro-optical properties of InAs/GaSb superlattice (SL) midwave infrared photodiodes with different periods were investigated. Three devices with different SL periods, but the same cut-off wavelength at 5 mu m at 77 K, were grown by molecular beam epitaxy on p-type GaSb substrates. The optical and electrical behaviours were characterized and analysed. Our investigations show strong influence of the SL composition on both the material properties and photodetector performances, such as the background doping concentration, shape of the response spectra and the dark current behaviours.

引用

页数：7