Correction of the characteristics of strongly irradiated SiC-based nuclear radiation detectors by increasing the working temperature

Owing to the wide bandgap of silicon carbide, p-n structures based on this semiconductor are characterized by low densities of the generation current. For this reason, it is possible to increase the working temperature of SiC-based p-n detectors of nuclear radiation so as to control the time of emission of nonequilibrium carriers from defect-related trapping centers. We have studied strongly irradiated p-n detectors (with a content of primarily displaced atoms on the order of 2 x 10(17) cm(-3)), determined the temperatures at which the trapped carriers are emitted during the time of pulse formation by the electronics employed, and evaluated the generation current at these temperatures. It is experimentally established that an increase in the temperature leads to a decrease in the negative role of trapping centers. At a temperature of 250A degrees C, it is possible to avoid the localization of electrons on shallow levels spaced by less than 0.76 eV from the conduction band edge.