Midinfrared lasers and light-emitting diodes with InAsSb/InAsP strained-layer superlattice active regions

被引：34
作者：
Kurtz, SR
Allerman, AA
Biefeld, RM
机构：
[1] Sandia National Laboratories, Albuquerque
来源：
APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 24期
关键词：
D O I：
10.1063/1.119154
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The properties of InAsSb/InAsP strained-layer superlattice (SLS), midwave infrared materials, and devices are reported. SLSs were grown by metal-organic chemical vapor deposition and characterized by magnetophotoluminescence and x-ray diffraction. Excellent performance was observed for an SLS light emitting diode (LED) and an optically pumped SLS laser. The semimetal injected, broadband LED emitted at 4 mu m with 80 mu W of power at 300 K and 200 mA average current. The laser displayed 3.86 mu m emission at 240 K, the maximum operating temperature of the laser, and a characteristic temperature of 33 K. (C) 1997 American Institute of Physics.
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页码：3188 / 3190
页数：3
相关论文
共 16 条
[1]   InAsSb-based mid-infrared lasers (3.8-3.9 mu m) and light-emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition [J].
Allerman, AA ;
Biefeld, RM ;
Kurtz, SR .
APPLIED PHYSICS LETTERS, 1996, 69 (04) :465-467
[2]   INASSB/INALASSB STRAINED-QUANTUM-WELL DIODE-LASERS EMITTING AT 3.9 MU-M [J].
CHOI, HK ;
TURNER, GW .
APPLIED PHYSICS LETTERS, 1995, 67 (03) :332-334
[3]   175 K continuous wave operation of InAsSb/InAIAsSb quantum-well diode lasers emitting at 3.5 mu m [J].
Choi, HK ;
Turner, GW ;
Manfra, MJ ;
Connors, MK .
APPLIED PHYSICS LETTERS, 1996, 68 (21) :2936-2938
[4]  
CHOI HK, 1995, I PHYS C SER, V144, P209
[5]   Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices [J].
Chow, DH ;
Miles, RH ;
Hasenberg, TC ;
Kost, AR ;
Zhang, YH ;
Dunlap, HL ;
West, L .
APPLIED PHYSICS LETTERS, 1995, 67 (25) :3700-3702
[6]  
FELIX CL, IN PRESS PHOTONICS T
[7]   2.7-MU-M INGAASSB/ALGAASSB LASER-DIODES WITH CONTINUOUS-WAVE OPERATION UP TO -39-DEGREES-C [J].
GARBUZOV, DZ ;
MARTINELLI, RU ;
MENNA, RJ ;
YORK, PK ;
LEE, H ;
NARAYAN, SY ;
CONNOLLY, JC .
APPLIED PHYSICS LETTERS, 1995, 67 (10) :1346-1348
[8]   Electron Auger processes in mid-infrared InAsSb/InGaAs heterostructures [J].
Hjalmarson, HP ;
Kurtz, SR .
APPLIED PHYSICS LETTERS, 1996, 69 (07) :949-951
[9]   MIDWAVE (4 MU-M) INFRARED-LASERS AND LIGHT-EMITTING-DIODES WITH BIAXIALLY COMPRESSED INASSB ACTIVE REGIONS [J].
KURTZ, SR ;
BIEFELD, RM ;
DAWSON, LR ;
BAUCOM, KC ;
HOWARD, AJ .
APPLIED PHYSICS LETTERS, 1994, 64 (07) :812-814
[10]   MAGNETOOPTICAL DETERMINATION OF LIGHT-HEAVY HOLE SPLITTINGS IN AS-RICH, INASSB ALLOYS AND SUPERLATTICES [J].
KURTZ, SR ;
BIEFELD, RM ;
HOWARD, AJ .
APPLIED PHYSICS LETTERS, 1995, 67 (22) :3331-3333
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