Growth process and morphology of three-dimensional GaSb islands on Ga/Si(111)

被引：11
作者：
Hara, Shinsuke [1 ]
Machida, Ryuto [1 ]
Yoshiki, Keisuke [1 ]
Irokawa, Katsumi
Miki, Hirofumi
Kawazu, Akira
Fujishiro, Hiroki I. [1 ]
机构：
[1] Tokyo Univ Sci Noda, Fac Ind Sci & Technol, Chiba 2788510, Japan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 5 | 2013年 / 10卷 / 05期
关键词：
silicon; III-V compound semiconductor; gallium antimonide; scanning tunneling microscopy; non-contact atomic force microscopy;
D O I：
10.1002/pssc.201200597
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The growth process and morphology of three-dimensional GaSb islands grown on a Ga/Si(111)-root 3 x root 3 reconstructed surface have been studied by ultrahigh-vacuum scanning tunneling microscopy and non-contact atomic force microscopy. Faceted GaSb islands with a density of 10(11) cm(-2) are formed on Ga/Si(111) in multilayer growth at 350 degrees C. Hexagonal-and pyramid-shaped islands are formed at 400 degrees C. Dome-shaped islands, which are similar to the islands grown on clean Si(111), are only formed at 450 degrees C. The growth morphology of GaSb islands varies depending on the atomic species terminated on Si(111) and the growth temperature. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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收藏
页码：865 / 868
页数：4
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