Strain in Hydrogen-Implanted Si Investigated Using Dark-Field Electron Holography

被引：12

作者：

Cherkashin, Nikolay ^{[1
,2
]}

Reboh, Shay ^{[1
,2
,3
]}

Lubk, Axel ^{[1
,2
]}

Hytch, Martin J. ^{[1
,2
]}

Claverie, Alain ^{[1
,2
]}

机构：

[1] CEMES CNRS, F-31055 Toulouse, France

[2] Univ Toulouse, F-31055 Toulouse, France

[3] CEA Leti, F-38054 Grenoble, France

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 09期

关键词：

SILICON; EXFOLIATION; SCATTERING; EVOLUTION;

D O I：

10.7567/APEX.6.091301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The microstructure of ion-implanted crystals is profoundly dictated by mechanical strain developing in interplay with structural defects. Understanding the origin of strain during the early stages of development is challenging and requires accurate measurements and modeling. Here, we investigate the mechanical strain in H-implanted Si. X-ray diffraction analysis is performed to measure the mesoscopic out-of-plane strain and dark-field electron holography to map strain in two-dimensions (2D) with nanometer spatial resolution. Supported by finite element method modeling, we propose that the mean strain field is explained by overlapping and averaging discrete strain fields generated by sub-nanoscopic defects that are intimately related to the H depth concentration. (c) 2013 The Japan Society of Applied Physics

引用

页数：4

共 26 条

[1] The generic nature of the Smart-Cut® process for thin film transfer [J].

Aspar, B ;

Moriceau, H ;

Jalaguier, E ;

Lagahe, C ;

Soubie, A ;

Biasse, B ;

Papon, AM ;

Claverie, A ;

Grisolia, J ;

Benassayag, G ;

Letertre, F ;

Rayssac, O ;

Barge, T ;

Maleville, C ;

Ghyselen, B .

JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (07) :834-840

[2] Separation of silicon wafers by the smart-cut method [J].

Bruel, M .

MATERIALS RESEARCH INNOVATIONS, 1999, 3 (01) :9-13

[3] Quantitative local strain measurements in compressive strained Ge/tensile strained Si bi-layers grown on top of relaxed Si0.5Ge0.5 virtual substrates [J].

Cherkashin, N. ;

Hytch, M. J. ;

Snoeck, E. ;

Hue, F. ;

Hartmann, J. M. ;

Bogumilowicz, Y. ;

Claverie, A. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 253 (1-2) :145-148

[4]

De Graef M., 2002, INTRO CONVENTIONAL T

[5] Thermal evolution of hydrogen related defects in hydrogen implanted Czochralski silicon investigated by Raman spectroscopy and atomic force microscopy [J].

Duengen, W. ;

Job, R. ;

Ma, Y. ;

Huang, Y. L. ;

Mueller, T. ;

Fahrner, W. R. ;

Keller, L. O. ;

Horstmann, J. T. ;

Fiedler, H. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (03)

[6] Comparison of platelet formation in hydrogen and helium-implanted silicon [J].

Hebras, X. ;

Nguyen, P. ;

Bourdelle, K. K. ;

Letertre, F. ;

Cherkashin, N. ;

Claverle, A. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 262 (01) :24-28

[7]

Hirth J. P., 1968, THEORY DISLOCATIONS, P48

[8] Investigation of the cut location in hydrogen implantation induced silicon surface layer exfoliation [J].

Hochbauer, T. ;

Misra, A. ;

Nastasi, M. ;

Mayer, J.W. .

Journal of Applied Physics, 2001, 89 (11 I)

[9] Nanoscale holographic interferometry for strain measurements in electronic devices [J].

Hytch, Martin ;

Houdellier, Florent ;

Hue, Florian ;

Snoeck, Etienne .

NATURE, 2008, 453 (7198) :1086-U5

[10] Strain mapping in layers and devices by electron holography [J].

Hytch, Martin ;

Cherkashin, Nikolay ;

Reboh, Shay ;

Houdellier, Florent ;

Claverie, Alain .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208 (03) :580-583

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