Metal-semiconductor-metal photodetector on as-deposited TiO2 thin films on sapphire substrate

被引：23

作者：

Caliskan, Deniz ^{[1
,2
]}

Butun, Bayram ^{[1
]}

Ozcan, Sadan ^{[3
]}

Ozbay, Ekmel ^{[1
,4
]}

机构：

[1] Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey

[2] Hacettepe Univ, Dept Nanotechnol & Nanomed, TR-06800 Ankara, Turkey

[3] Hacettepe Univ, Dept Engn Phys, TR-06800 Ankara, Turkey

[4] Bilkent Univ, Dept Phys, Dept Elect & Elect Engn, TR-06800 Ankara, Turkey

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2013年 / 31卷 / 02期

关键词：

PHOTODIODES;

D O I：

10.1116/1.4794526

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TiO2 thin films are prepared on c-plane sapphire substrates by the RF magnetron sputtering method. The performance of the Pt contact metal-semiconductor-metal (MSM) photodetector fabricated on as-deposited films is studied. The dark current density and the responsivity obtained were 1.57 x 10(-9) A/cm(2) at 5V bias and 1.73A/W at 50V bias, respectively. Breakdown is not observed up to 50V bias. Rise and fall times for the photocurrent were 7 and 3 s, respectively. Our results show that high quality MSM photodetectors can be fabricated without high temperature and complicated fabrication steps. (C) 2013 American Vacuum Society. [http://dx.doi.org/10.1116/1.4794526]

引用

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