Analysis of angular dependence of proton-induced multiple-bit upsets in a synchronous SRAM

被引：13

作者：

Ikeda, N ^{[1
]}

Kuboyama, S

Matsuda, S

Handa, T

机构：

[1] Japan Aerosp Explorat Agcy, Tsukuba, Ibaraki 3058505, Japan

[2] Comp Software Dev Co Ltd, Tokyo 1080075, Japan

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2005年 / 52卷 / 06期

关键词：

angular irradiation; GEANT4; multiple-bit upset (MBU); proton; single-event upset (SEU); SRAM;

D O I：

10.1109/TNS.2005.860692

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Angular dependence of proton-induced Multiple-Bit Upsets (MBUs) in a synchronous SRAM is reported. Experiments showed that the cross section of MBU depended on proton energy, incident direction, and physical arrangement of sensitive transistors in adjacent cells. Also analysis clarified that there was a special condition which MBU could be caused by a mechanism of Single-Event Upsets (SEUs), not by that of MBUs.

引用

页码：2200 / 2204

页数：5

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