High efficiency GaN LEDs with submicron-scale 2Dperiodic structures directly fabricated by laser interference ablation

被引：15

作者：

Chen, Yuanyuan ^{[1
,2
]}

Yuan, Dajun ^{[2
,3
]}

Yang, Muchuan ^{[2
]}

Wang, Deli ^{[2
,4
]}

Sun, Xiaohan ^{[1
]}

机构：

[1] Southeast Univ, Natl Res Ctr Opt Sensing Commun, Integrated Networking Lab Photon & Opt Commun, Dept Elect Engn, Nanjing 210096, Jiangsu, Peoples R China

[2] Univ Calif San Diego, Dept Elect & Comp Engn, San Diego, CA 92093 USA

[3] Torrey Hills Technol LLC, 6370 Lusk Blvd,Suite F111, San Diego, CA 92121 USA

[4] NEEM Sci Inc, San Diego, CA 92129 USA

来源：

OPTICS AND LASER TECHNOLOGY | 2017年 / 90卷

关键词：

Blue GaN LED; Light extraction efficiency (LEE); Laser interference ablation (LIA); LIGHT-EMITTING-DIODES; LAYER;

D O I：

10.1016/j.optlastec.2016.08.019

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report the investigation of directly ablating submicron-scale 2D periodic structure method on the p-layer of blue GaN light-emitting diode (LED) by laser interference. Hexagonal lattice structures on the p-layer surface of GaN LED are fabricated by three beam laser interference and the air hole radius can be changed by adjusting the laser fluence. The structure with a period of 400 nm, hole radius of 180 nm, and depth of 78 nm is patterned with the laser fluence of 215 mJ/cm(2). Experimental results coincide well with the simulation, and reveal that the patterned LED get a maximum enhancement of 55.7% in light output power compared to flat LED.

引用

页码：211 / 215

页数：5

共 16 条

[1] Strong High Order Diffraction of Guided Modes in Micro-Cavity Light-Emitting Diodes With Hexagonal Photonic Crystals
Bergenek, Krister
Wiesmann, Christopher
Zull, Heribert
Rumbolz, Christian
Wirth, Ralph
Linder, Norbert
Streubel, Klaus
Krauss, Thomas F.
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2009, 45 (12) : 1517 - 1523
[2] Light emitting diodes reliability review
Chang, Moon-Hwan
Das, Diganta
Varde, P. V.
Pecht, Michael
[J]. MICROELECTRONICS RELIABILITY, 2012, 52 (05) : 762 - 782
[3] Che Z, 2015, INT C NUMER SIMUL, P99, DOI 10.1109/NUSOD.2015.7292841
[4] Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials
Chen, Hao
Zhang, Qi
Chou, Stephen Y.
[J]. NANOTECHNOLOGY, 2015, 26 (08)
[5] Thermal management for high-power photonic crystal light emitting diodes
Chen, Yuanyuan
Sun, Bin
Ma, Tianhe
Sun, Xiaohan
[J]. MICROELECTRONICS RELIABILITY, 2014, 54 (01) : 124 - 130
[6] Enhanced light output from aligned micropit InGaN-based light emitting diodes using wet-etch sapphire patterning
Cuong, T. V.
Cheong, H. S.
Kim, H. G.
Kim, H. Y.
Hong, C. -H.
Suh, E. K.
Cho, H. K.
Kong, B. H.
[J]. APPLIED PHYSICS LETTERS, 2007, 90 (13)
[7] Improvement of light extraction efficiency of GaN-based light-emitting diodes using Ag nanostructure and indium tin oxide grating
Dang, Suihu
Li, Chunxia
Jia, Wei
Zhang, Zhuxia
Li, Tianbao
Han, Peide
Xu, Bingshe
[J]. OPTICS EXPRESS, 2012, 20 (21): : 23290 - 23299
[8] Efficiency improvements in AlGaN-based deep ultraviolet light-emitting diodes using inverted-V-shaped graded Al composition electron blocking layer
Fan, Xuancong
Sun, Huiqing
Li, Xuna
Sun, Hao
Zhang, Cheng
Zhang, Zhuding
Guo, Zhiyou
[J]. SUPERLATTICES AND MICROSTRUCTURES, 2015, 88 : 467 - 473
[9] Fred E. Schubert, 2016, LIGHT EMITTING DIODE
[10] Large-area microlens arrays fabricated on flexible polycarbonate sheets via single-step laser interference ablation
Guo, Rui
Yuan, Dajun
Das, Suman
[J]. JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2011, 21 (01)

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